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MSA-0900 - Cascadable Silicon Bipolar MMIC Amplifier

Download the MSA-0900 datasheet PDF. This datasheet also covers the MSA-0900_Hewlett variant, as both devices belong to the same cascadable silicon bipolar mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The MSA-0900 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip.

This MMIC is designed for very wide bandwidth industrial and military applications that require flat gain and low VSWR.

Note: 1.

Features

  • Broadband, Minimum Ripple Cascadable 50 Ω Gain Block.
  • 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz.
  • 3 dB Bandwidth: 0.1 to 6.0␣ GHz.
  • Low VSWR: ≤ 1.5:1 from 0.1 to 4.0␣ GHz.
  • 11.5 dBm Typical P1dB at 1.0␣ GHz The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSA-0900_Hewlett-Packard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MSA-0900
Manufacturer Hewlett-Packard
File Size 57.89 KB
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA-0900 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0900 Features • Broadband, Minimum Ripple Cascadable 50 Ω Gain Block • 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz • 3 dB Bandwidth: 0.1 to 6.0␣ GHz • Low VSWR: ≤ 1.5:1 from 0.1 to 4.0␣ GHz • 11.5 dBm Typical P1dB at 1.0␣ GHz The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.
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