Datasheet4U.com

2SJ297 Datasheet Silicon P-Channel MOS FET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power.

📥 Download Datasheet

2SJ297 silicon p-channel mos fet by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	2SJ297
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	23.48 KB
Description	Silicon P-Channel MOS FET
Download	2SJ297 Download (PDF)

Key Features

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device can be driven from 5 V source.
Suitable for switching regulator, DC-DC converter.
Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SJ297(L), 2SJ297(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse d.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
2SJ297L	Silicon P-Channel MOS FET
2SJ297S	Silicon P-Channel MOS FET
2SJ293	Silicon P-Channel MOSFET
2SJ296	Silicon P-Channel MOSFET
2SJ220	Silicon P-Channel MOS FET
2SJ220L	Silicon P-Channel MOS FET
2SJ220S	Silicon P-Channel MOS FET
2SJ122	Silicon P-Channel MOSFET
2SJ176	SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ177	Silicon P-Channel MOSFET