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2SJ291 - Silicon P-Channel MOS FET

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Hitachi Semiconductor

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2SJ291 Silicon P-Channel MOS FET by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – 2SJ291

Datasheet Details

Part number	2SJ291
Manufacturer	Hitachi Semiconductor
File Size	80.32 KB
Description	Silicon P-Channel MOS FET
Datasheet	2SJ291 Datasheet
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Features

Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www. DataSheet4U. com.

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Published: Aug 23, 2008 |