2SJ291 Description
2SJ291 Silicon P-Channel MOS FET November 1996 .. Application High speed power switching.
2SJ291 Key Features
- Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable fo
2SJ291 is Silicon P-Channel MOS FET manufactured by Hitachi Semiconductor.
| Part Number | Description |
|---|---|
| 2SJ290 | SILICON P-CHANNEL MOSFET |
| 2SJ217 | P-Channel MOSFET |
| 2SJ221 | P-Channel MOSFET |
| 2SJ222 | P-Channel MOSFET |
| 2SJ244 | P-Channel MOSFET |
2SJ291 Silicon P-Channel MOS FET November 1996 .. Application High speed power switching.