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2SJ291 - Silicon P-Channel MOS FET

Hitachi Semiconductor

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Datasheet Details

Part number: 2SJ291
Manufacturer: Hitachi Semiconductor
File Size: 80.32 KB
Datasheet: 2SJ291_HitachiSemiconductor.pdf
Description: Silicon P-Channel MOS FET

2SJ291 Product details

Features

Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www. DataSheet4U. com.

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Silicon P-Channel MOS FET Hitachi Semiconductor

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2SJ291 Stock/Price