2SK2595 Description
2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st.
2SK2595 Key Features
- High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz)
- pact package capable of surface mounting
2SK2595 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
2SK2595 | Silicon N-Channel MOSFET |
2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st.