Download 2SK2595 Datasheet PDF
Hitachi Semiconductor
2SK2595
Features - High power output, High gain, High efficiency PG = 7.8d B, Pout = 37.3d Bm, ηD = 50 %min. (f = 836.5MHz) - pact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- Pch- Tch Tstg 2 1 Ratings 17 ±10 1.1 5 20 150 - 45 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Symbol I DSS I GSS VGS(off) Ciss Coss Pout Min. - - 0.6 - - 37.3 Typ - - - 68 27 38.45 Max. 10 ±5.0 1.3 - - - Unit µA µA V p F p F d Bm Test Conditions VDS = 12 V, VGS = 0 VGS = ±10V,...