High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz).
Compact package capable of surface mounting
Outline
This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested. 2SK2595
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle.
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www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm...
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gh power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested. 2SK2595 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings 17 ±10 1.
2SK2595 Datasheet
