High gain PG = 27.6 dB typ. at f = 200 MHz
Outline
MPAK-4
2
3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
3SK300
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 ±8 ±8 25 150 150.
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3SK300
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
ADE-208-449 1st. Edition Features
• Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz
Outline
MPAK-4
2
3 1 4
1. Source 2. Gate1 3. Gate2 4.