Part number:
3SK321
Manufacturer:
Hitachi Semiconductor
File Size:
59.20 KB
Description:
Silicon n-channel dual gate mos fet.
* Low noise figure. NF = 2.0 dB typ. at f = 900 MHz
* Capable of low voltage operation
* Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage
3SK321
Hitachi Semiconductor
59.20 KB
Silicon n-channel dual gate mos fet.
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