Part number:
3SK322
Manufacturer:
Hitachi Semiconductor
File Size:
90.15 KB
Description:
Silicon n-channel dual gate mos fet.
* Low noise figure. NF = 1.0 dB typ. at f = 200 MHz
* Capable of low voltage operation
* Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline 3SK322 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drai
3SK322
Hitachi Semiconductor
90.15 KB
Silicon n-channel dual gate mos fet.
📁 Related Datasheet
3SK320 N-Channel Transistor (Toshiba Semiconductor)
3SK321 Silicon N-Channel Dual Gate MOS FET (Hitachi Semiconductor)
3SK300 Silicon N-Channel Transistor (Hitachi Semiconductor)
3SK302 Silicon N-Channel MOS (Panasonic)
3SK306 Silicon N-Channel MOS (Panasonic)
3SK309 UHF RF Amplifier (Hitachi Semiconductor)
3SK317 UHF / VHF RF Amplifier (Hitachi Semiconductor)
3SK318 UHF RF Amplifier (Hitachi Semiconductor)
3SK319 UHF RF Amplifier (Hitachi Semiconductor)
3SK38A Silicon N-Channel Transistor (Toshiba)
