Part number:
6AM15
Manufacturer:
Hitachi Semiconductor
File Size:
236.53 KB
Description:
Silicon n/p channel mos fet high speed power switching.
* Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting
* Outline 6AM15 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch
6AM15
Hitachi Semiconductor
236.53 KB
Silicon n/p channel mos fet high speed power switching.
📁 Related Datasheet
6AM11 Silicon N-channel/p-channel Power MOS Fet Array (Renesas)
6AM12 Silicon N-channel/p-channel Complementary Power MOS Fet Array (Renesas)
6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array (Hitachi Semiconductor)
6AM14 Silicon N-Channel/P-Channel Power MOS FET Array (Hitachi Semiconductor)
6A01 6.0A RECTIFIER (Diodes Incorporated)
6A02 6.0A RECTIFIER (Diodes Incorporated)
6A03 6.0A RECTIFIER (Diodes Incorporated)
6A04 6.0A RECTIFIER (Diodes Incorporated)
6A05 General Purpose Plastic Rectifier (Kingtronics)
6A05 SILICON RECTIFIER DIODE (EIC)
