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HB56SW3272ESK - 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)

Datasheet Summary

Description

The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications.

Features

  • 168-pin socket type package (Dual lead out)  Lead pitch : 1.27 mm.
  • Single 3.3 V supply (±0.3 V).
  • High speed  Access time: tRAC = 50 ns/60 ns (max)  Access time: tCAC = 18 ns/20 ns (max).
  • Low power dissipation  Active mode: 8.78 W/7.49 W (max)  Standby mode (TTL): 295.2 mW (max).
  • JEDEC standard outline buffered 8-byte DIMM.
  • Buffered input except RAS and DQ HB56SW3272ESK-5/6.
  • 4-byte interleave enabl.

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Datasheet Details

Part number HB56SW3272ESK
Manufacturer Hitachi Semiconductor
File Size 338.46 KB
Description 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
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HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0 June 23, 1998 Description The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The HB56SW3272ESK is 32 M × 72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM (HM5165405) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP package. The HB56SW3272ESK offer Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56SW3272ESK are 168-pin socket type package (dual lead out).
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