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CS3N40A3H - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS3N40A3H
Manufacturer Huajing Microelectronics
File Size 189.09 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N40A3H Datasheet

Full PDF Text Transcription for CS3N40A3H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS3N40A3H. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS3N40 A3H ○R General Description： VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned p...

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N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 30 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Po

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