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CS3N50B3 - Silicon N-Channel Power MOSFET

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Datasheet Details

Part number CS3N50B3
Manufacturer Huajing Microelectronics
File Size 195.48 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N50B3-HuajingDiscreteDevices.pdf

CS3N50B3 Product details

Description

VDSS 500 V CS3N50 B3, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON) 2.5 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

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