HY27UH088G2M - 8G-Bit NAND Flash Memory

Hynix Semiconductor

Datasheet Details

The.

9) Change AC Characteristics - Errata is deleted. tWC Before After 0.4 - tR is change tR Before After 25us 30us 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns Sep. 16. 2005 Preliminary 10) Change DC Characteristics (Table 8) - Operation Current ICC1 Typ Before After 30 40 ICC2 Typ 30 40 ICC3 Typ 30 40 ILI Max ILO Max ± 20 ± 20 ± 40 ± 40 0.5 1) Delete Concurrent Operation. Oct. 05. 2005 Preliminary Rev 0.5 / Oct. 2005 2 Preliminary HY27UH088G(2/D)M Series 8Gbit (1Gx8bit) NAND Flash.

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