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HY27UH164G2M

(HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory

HY27UH164G2M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufact

HY27UH164G2M General Description

The HYNIX HY27(U/S)H(08/16)4G2M series is a 512Mx8bit with spare 8Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can.

HY27UH164G2M Datasheet (367.65 KB)

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Datasheet Details

Part number:

HY27UH164G2M

Manufacturer:

Hynix Semiconductor

File Size:

367.65 KB

Description:

(hy27xhxx4g2m series) 4g-bit nand flash memory.
m Preliminary o HY27UH(08/16)4G2M Series .c HY27SH(08/16)4G2M Series U 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 4 t e e h S Document Title a 4Gbit (5.

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TAGS

HY27UH164G2M HY27xHxx4G2M Series 4G-Bit NAND Flash Memory Hynix Semiconductor

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