HY27UH088GDM Datasheet, Memory, Hynix Semiconductor

HY27UH088GDM Features

• Memory 9) Change AC Characteristics - Errata is deleted. tWC Before After 0.4 - tR is change tR Before After 25us 30us 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns Sep. 16. 2005 Preliminary 10) Cha

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HY27UH088GDM

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Hynix Semiconductor

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📄 Datasheet

Description:

8g-bit nand flash memory. The HYNIX HY27UH088G(2/D)M series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAN

HY27UH088GDM Application

• Applications NAND INTERFACE - x8 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATUR

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HY27UH088GDM

Hynix Semiconductor

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