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HY27UH088G2M

8G-Bit NAND Flash Memory

HY27UH088G2M Features

* 9) Change AC Characteristics - Errata is deleted. tWC Before After 0.4 - tR is change tR Before After 25us 30us 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns Sep. 16. 2005 Preliminary 10) Change DC Characteristics (Table 8) - Operation Current ICC1 Typ Before After 30 40 ICC2 Typ 30 40 ICC3 Typ 30 40 ILI

HY27UH088G2M General Description

The HYNIX HY27UH088G(2/D)M series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is p.

HY27UH088G2M Datasheet (463.12 KB)

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Datasheet Details

Part number:

HY27UH088G2M

Manufacturer:

Hynix Semiconductor

File Size:

463.12 KB

Description:

8g-bit nand flash memory.
w e e Document h Title 8Gbit (1Gx8bit) S NAND Flash Memory a at Revision .D History w w Revision No. 0.0 U 4 t . m o c Preliminary HY27UH088G(2/D.

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HY27UH088G2M 8G-Bit NAND Flash Memory Hynix Semiconductor

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