HY27UH084G2M Datasheet (Hynix Semiconductor) - (HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory

HY27UH084G2M, (HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory

The HYNIX HY27(U/S)H(08/16)4G2M series is a 512Mx8bit with spare 8Mx8 bit capacity.

The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can

m Preliminary o HY27UH(08/16)4G2M Series .c HY27SH(08/16)4G2M Series U 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 4 t e e h S Document Title a 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory at .D w History Revision w w Revision No.

0.0 0.1 0.2 m o .c U 4 t e e h S a t a .D w w w Initial Draft.

Feb.

04.

2004 1) Add Errata Specification tCLS 0 5 tCLH tWP tALS tALH 10 15 25 45 0 5 10 15 tDS 20 25 tWC 50 70 tR 25us 27us Relaxed value Case tRC 50 tRP tREH tREA 20 20 25 20 20 30 30 30 30 Specifica

HY27UH084G2M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufact