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HY5DU281622DT Datasheet

Manufacturer: SK Hynix
HY5DU281622DT datasheet preview

Datasheet Details

Part number HY5DU281622DT
Datasheet HY5DU281622DT_HynixSemiconductor.pdf
File Size 560.43 KB
Manufacturer SK Hynix
Description (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM
HY5DU281622DT page 2 HY5DU281622DT page 3

HY5DU281622DT Overview

and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU281622DT Key Features

  • VDD, VDDQ = 2.6V +/- 0.1V All inputs and outputs are patible with SSTL_2 interface Fully differential clock inputs (CK,
  • data transaction aligned to bidirectional data strobe (DQS)
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Progr
  • Auto refresh and self refresh supported . LDQS) per each x8 I/O
  • tRAS lock out function supported Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (c
  • 4096 refresh cycles / 64ms DQ)
  • JEDEC standard 400mil 66pin TSOP-II with 0.65mm On chip DLL align DQ and DQS transition with CK pin pitch transition
  • Full and Half strength driver option controlled by DM mask write data-in at the both rising and falling EMRS edges of th
  • Note : D of speed indicates DDR400

HY5DU281622 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Hyundai Logo HY5DU281622 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
Hynix Logo HY5DU281622FTP 128Mb DDR SDRAM Hynix
Hyundai Logo HY5DU281622LT-H 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
Hyundai Logo HY5DU281622LT-K 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
Hyundai Logo HY5DU281622LT-L 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
SK Hynix logo - Manufacturer

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