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HY5DU281622LT - (HY5DU28xxxAT) 3rd 128M DDR SDRAM

Download the HY5DU281622LT datasheet PDF. This datasheet also covers the HY5DU28822AT variant, as both devices belong to the same (hy5du28xxxat) 3rd 128m ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL align DQ and DQS transition with CK transition DM mask write data-in at the both ri.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5DU28822AT_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
HY5DU281622LT-H 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
HY5DU281622LT-K 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
HY5DU281622LT-L 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
HY5DU281622 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
HY5DU281622FTP 128Mb DDR SDRAM Hynix

Other Datasheets by SK Hynix

Part Number Description
HY5DU281622LT (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM
HY5DU281622AT (HY5DU28xxxAT) 3rd 128M DDR SDRAM
HY5DU281622AT-6 128M(8Mx16) DDR SDRAM
HY5DU281622DT (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM
HY5DU281622ET 128M(8Mx16) GDDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY5DU28422A(L)T HY5DU28822A(L)T HY5DU281622A(L)T 3rd 128M DDR SDRAM HY5DU28422A(L)T HY5DU28822A(L)T HY5DU281622A(L)T This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4/May. 02 1 www.DataSheet4U.com HY5DU28422A(L)T HY5DU28822A(L)T HY5DU281622A(L)T Revision History 1. Revision 0.2 (Nov.01) 1) Device operation and timing diagram removed 2) tHZ / tLZ SPEC defined 2. Revision 0.3 (Feb.02) 1) “Preliminary” removed 3. Revision 0.4 (May. 02) 1) Input leakage current changed from +/-5uA to +/-2uA Rev. 0.4/May.
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