HY5R288HC745 Datasheet | SK Hynix

Direct RDRAM™ 256/288-Mbit (512Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including puter memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256/288-Mbit Direct Rambus DRAMs (RDRAM)are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer .. rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions. System oriented Features for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM u BGA Package The 256/288-Mbit Direct RDRAMs are offered in a u BGA package suitable for desktop as well as low-profile add-in card and mobile applications. Direct RDRAMs operate from a 2.5 volt supply. Key Timing Parameters / Part Numbers Organizationa 512Kx16x32s 512Kx16x32s 512Kx16x32s 512Kx16x32s 512Kx18x32s 512Kx18x32s 512Kx18x32s 512Kx18x32s I/O Freq. Core Access Time MHz (ns) 600 711 800 800 600 711 800 800 53 45 45 40 53 45 45 40 Part Number HY5R256HC653 HY5R256HC745 HY5R256HC845 HY5R256HC840 HY5R288HC653 HY5R288HC745 HY5R288HC845 HY5R288HC840 Features Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - Separate...