HY5R128HCxxx, HY5R128HC745 Datasheet - Hynix Semiconductor

HY5R128HCxxx (HY5R1xxHCxxx) RDRAM

and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1/June.00 1 128/144Mbit (256Kx16/18x32s) Pinouts and Definitions Center-Bonded Devices These tables shows the pin assignments of the.

Direct RDRAM™ 128/144Mbit (256Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz t.

HY5R128HCxxx Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 128/144-Mbit Direct

HY5R128HC745_HynixSemiconductor.pdf