HY5R288HC745

RDRAM

Hynix Semiconductor

HY5R288HC745 Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 256/288-Mbit Direct

HY5R288HC745 General Description

and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. 1 Direct RDRAM™ 256/288-Mbit (512Kx16/18x32s) Preliminary Pinouts and Definitions Center-Bonded Devices These tables shows the pin as.

HY5R288HC745 Datasheet (2.62 MB)

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HY5R288HC745

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Hynix Semiconductor

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2.62 MB

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Rdram.
Direct RDRAM™ 256/288-Mbit (512Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable.

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HY5R288HC745 RDRAM Hynix Semiconductor

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HY5R288HC745 Features

HY5R288HC745 General Description

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