HY5R288HC745 Datasheet (Hynix Semiconductor)

HY5R288HC745, RDRAM

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Hynix Semiconductor Inc.

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1 Direct RDRAM™ 256/288-Mbit (512Kx16/18x32s) Preliminary Pinouts and Definitions Center-Bonded Devices These tables shows the pin as

Direct RDRAM™ 256/288-Mbit (512Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

The 256/288-Mbit Direct Rambus DRAMs (RDRAM)are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits.

The use of Rambus Signaling Level (RSL) technology permits 600MHz

HY5R288HC745 Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 256/288-Mbit Direct