HY5R144HCxxx

(HY5R1xxHCxxx) RDRAM

Hynix Semiconductor

HY5R144HCxxx Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 128/144-Mbit Direct

HY5R144HCxxx General Description

and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1/June.00 1 128/144Mbit (256Kx16/18x32s) Pinouts and Definitions Center-Bonded Devices These tables shows the pin assignments of the.

HY5R144HCxxx Datasheet (2.48 MB)

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HY5R144HCxxx

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Hynix Semiconductor

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2.48 MB

Description:

(hy5r1xxhcxxx) rdram.
Direct RDRAM™ 128/144Mbit (256Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable f.

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HY5R144HCxxx HY5R1xxHCxxx RDRAM Hynix Semiconductor

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HY5R144HCxxx Features

HY5R144HCxxx General Description

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