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HY5R128HC745 (HY5R1xxHCxxx) RDRAM

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Description

Direct RDRAM™ 128/144Mbit (256Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable f.
and is subject to change without notice.

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Datasheet Specifications

Part number
HY5R128HC745
Manufacturer
Hynix Semiconductor
File Size
2.48 MB
Datasheet
HY5R128HC745_HynixSemiconductor.pdf
Description
(HY5R1xxHCxxx) RDRAM

Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 128/144-Mbit Direct

Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permit

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