discrete power gan hemt.
* Frequency Range DC-12GHz
* 41.5dBm Nominal P3dB
* Maximum PAE at 6GHz of 65%
* Drain Bias 28V
* Technology: GaN on SiC
* Lead-free and RoHS comp.
* Aerospace & Defense
* Broadband Wireless
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Description
The ICPB2002 is a GaN on SiC discrete HEMT, desig.
The ICPB2002 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz. The design is optimized for power and efficiency using field plate technology.
RF Performance | Simulated Conditions unless otherwise stated | TA=2.
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