ICPB2002
Description
The ICPB2002 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz. The design is optimized for power and efficiency using field plate technology.
Key Features
- Frequency Range DC-12GHz
- 41.5dBm Nominal P3dB
- Maximum PAE at 6GHz of 65%
- Drain Bias 28V
- Technology: GaN on SiC
- Lead-free and RoHS compliant
- Chip Dimensions: 0.81 x 1.14 x 0.10mm
