ICPB1020 - Discrete Power GaN HEMT
The ICPB1020 is a GaN on SiC discrete HEMT that operates from DC-14GHz.
The design is optimized for power and efficiency using field plate technology.
RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse Width 100uS, Duty Cycle=10% Frequency Output Power P3dB Bias
ICPB1020 Features
* Frequency Range DC-14GHz
* 51.5dBm Nominal P3dB Pulsed
* Maximum PAE at 6GHz of 71%
* 18dB Linear Gain at 6GHz
* Drain Bias 28V
* Technology: GaN on SiC
* Lead-free and RoHS compliant
* Chip Dimensions: 0.82 x 4.56 x 0.10mm Applicatio
