ICPB1020 Datasheet - ICONIC RF

ICPB1020 Discrete Power GaN HEMT

The ICPB1020 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse Width 100uS, Duty Cycle=10% Frequency Output Power P3dB Bias.

ICPB1020 Features

* Frequency Range DC-14GHz

* 51.5dBm Nominal P3dB Pulsed

* Maximum PAE at 6GHz of 71%

* 18dB Linear Gain at 6GHz

* Drain Bias 28V

* Technology: GaN on SiC

* Lead-free and RoHS compliant

* Chip Dimensions: 0.82 x 4.56 x 0.10mm Applicatio

ICPB1020-ICONICRF.pdf

ICPB1020 Datasheet Preview — Preview of ICPB1020 PDF

Datasheet Details

Part number:

ICPB1020

Manufacturer:

ICONIC RF

File Size:

2.13 MB

Description:

Discrete power gan hemt.

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