ICPB1010 - Discrete Power GaN HEMT
The ICPB1010 is a GaN on SiC discrete HEMT that operates from DC-14GHz.
The design is optimized for power and efficiency using field plate technology.
RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width =100uS, Duty cycle = 10% Frequency GHz 3 Typical 6
ICPB1010 Features
* Frequency Range DC-14GHz
* 48.5dBm Nominal P3dB Pulsed
* Maximum PAE at 6GHz of 72%
* 17.8dB Linear Gain at 6GHz
* Drain Bias 28V
* Technology: GaN on SiC
* Lead-free and RoHS compliant
* Chip Dimensions: 0.824 x 2.495 x 0.10mm Applic
