ICPB1010 Datasheet - ICONIC RF

ICPB1010 Discrete Power GaN HEMT

The ICPB1010 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width =100uS, Duty cycle = 10% Frequency GHz 3 Typical 6.

ICPB1010 Features

* Frequency Range DC-14GHz

* 48.5dBm Nominal P3dB Pulsed

* Maximum PAE at 6GHz of 72%

* 17.8dB Linear Gain at 6GHz

* Drain Bias 28V

* Technology: GaN on SiC

* Lead-free and RoHS compliant

* Chip Dimensions: 0.824 x 2.495 x 0.10mm Applic

ICPB1010-ICONICRF.pdf

ICPB1010 Datasheet Preview — Preview of ICPB1010 PDF

Datasheet Details

Part number:

ICPB1010

Manufacturer:

ICONIC RF

File Size:

2.03 MB

Description:

Discrete power gan hemt.

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