ICPB2002

Discrete Power GaN HEMT

ICPB2002 Features

* Frequency Range DC-12GHz

* 41.5dBm Nominal P3dB

* Maximum PAE at 6GHz of 65%

* Drain Bias 28V

* Technology: GaN on SiC

* Lead-free and RoHS compliant

* Chip Dimensions: 0.81 x 1.14 x 0.10mm Applications

* Aerospace & Defense

ICPB2002 General Description

The ICPB2002 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V CW Typical Frequency GHz 3 6 10 .

ICPB2002 Datasheet (742.67 KB)

ICPB2002 Datasheet Preview — Preview of ICPB2002 PDF

Datasheet Details

Part number:

ICPB2002

Manufacturer:

ICONIC RF

File Size:

742.67 KB

Description:

Discrete power gan hemt.

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ICPB2002 Discrete Power GaN HEMT ICONIC RF

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ICPB2002 Features

ICPB2002 General Description

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