ICPB2002 - Discrete Power GaN HEMT
The ICPB2002 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz.
The design is optimized for power and efficiency using field plate technology.
RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V CW Typical Frequency GHz 3 6 10
ICPB2002 Features
* Frequency Range DC-12GHz
* 41.5dBm Nominal P3dB
* Maximum PAE at 6GHz of 65%
* Drain Bias 28V
* Technology: GaN on SiC
* Lead-free and RoHS compliant
* Chip Dimensions: 0.81 x 1.14 x 0.10mm Applications
* Aerospace & Defense
