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2N6287 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Complement to type 2N6284 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment.

ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -20 A ICP Collector Current-Peak -40 A IB Base Current -0.5 A PC Collector Power Dissipation@TC=25℃ 160 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 1.09 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor 2N6287 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;

IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A;

Overview

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor.