Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = -10 Adc Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type 2N6284 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6287 | Central Semiconductor | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6287 | STMicroelectronics | Complementary power Darlington transistors |
| 2N6287 | onsemi | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6287 | Savantic | Silicon PNP Power Transistors |
| 2N6287 | Semelab | Bipolar PNP Device |
| 2N6287 | VPT Components | PNP Darlington Power Silicon Transistor |
| 2N6287 | Microsemi | PNP DARLINGTON POWER SILICON TRANSISTOR |
| 2N6287 | NTE Electronics | Silicon PNP Darlington Transistor |
| 2N6287 | Motorola Semiconductor | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6287 | Comset Semiconductors | PNP Darlington Power Silicon Transistor |
