Datasheet Details
| Part number | 2SA1773 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.66 KB |
| Description | PNP Transistor |
| Download |
2SA1773 Download (PDF)
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| Part number | 2SA1773 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.66 KB |
| Description | PNP Transistor |
| Download |
2SA1773 Download (PDF)
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|
|
|
·High breakdown voltage: V(BR)CEO >-400V @IC=-1mA ·Large current capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1773 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1773 | PNP Transistor | Sanyo Semicon Device |
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