| Part number | 2SB682 |
|---|---|
| Datasheet | 2SB682-INCHANGE.pdf |
| File Size | 214.36 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB682 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB681 | PNP Transistor |
| 2SB683 | PNP Transistor |
| 2SB686 | PNP Transistor |
| 2SB689 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |
