Inchange Semiconductor 2SB821
Silicon PNP Power Transistors
| Part No. | 2SB821 |
|---|---|
| Datasheet | 2SB821 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min)●Good Linearity of hFE
●Low Saturation Voltage
APPLICATIONS
●Designed for use in audio amplifier, voltage regulator, DC-DC converter and relay driver.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -300 250 125 mA mW ℃ Tstg Storage Temperature Range -55~125 ℃ isc website： isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB821ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA ; IE= 0 V(BR)