Datasheet Details
| Part number | 2SC3299 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.38 KB |
| Description | NPN Transistor |
| Datasheet |
 2SC3299 Datasheet
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| Part number | 2SC3299 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.38 KB |
| Description | NPN Transistor |
| Datasheet |
2SC3299 Datasheet
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1307 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3299 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3299.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3299 | Silicon NPN Transistor | Toshiba |
 |
2SC3299 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3296 | NPN Transistor |
| 2SC3297 | NPN Transistor |
| 2SC3298 | NPN Transistor |
| 2SC3298A | NPN Transistor |
| 2SC3298B | NPN Transistor |
| 2SC3210 | NPN Transistor |
| 2SC3211 | NPN Transistor |
| 2SC3212 | NPN Transistor |
| 2SC3214 | NPN Transistor |
| 2SC3223 | NPN Transistor |