Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: V(BR)CEO= 50V(Min)
- Good Linearity of hFE
- plement to Type 2SA1307
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high current switching...
