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2SC3299 Datasheet Preview

2SC3299 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3299
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 50V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1307
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
Total Power Dissipation
@ Ta=25
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
1
A
2
W
20
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC3299 Datasheet Preview

2SC3299 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SC3299
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A
VB E(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.15A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 1V
hFE-2
DC Current Gain
IC= 3A; VCE= 1V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 0.15A; RL= 10Ω;
VCC= 30V
MIN TYP. MAX UNIT
50
V
0.4
V
1.2
V
1.0 μA
1.0 μA
70
240
30
120
MHz
80
pF
0.1
μs
1.0
μs
0.1
μs
hFE-1 Classifications
O
Y
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SC3299
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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2SC3299 Datasheet PDF





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