2SC3299 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·plement to Type 2SA1307 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3299 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...