2SD1047E
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
- Good Linearity of h FE
- High Current Capability
- Wide Area of Safe Operation
- plement to Type 2SB817E
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICP PC TJ
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature
℃
Tstg
Storage Temperature Range
-40~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown...
