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2SD1047E NPN Transistor

2SD1047E Description

isc Silicon NPN Power Transistor isc Product Specification 2SD1047E .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). Good Linearity of hFE. High Current Capability. Wide Area of Safe Operati.

2SD1047E Applications

* Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICP PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector P

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Datasheet Details

Part number
2SD1047E
Manufacturer
INCHANGE
File Size
201.79 KB
Datasheet
2SD1047E-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1047E-like datasheet