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2SD1180 - NPN Transistor

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Datasheet Details

Part number 2SD1180
Manufacturer INCHANGE
File Size 179.38 KB
Description NPN Transistor
Datasheet download datasheet 2SD1180-INCHANGE.pdf

2SD1180 Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) Low collector saturation voltage With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio and radio frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 6 V IC

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