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2SD1307 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 350V(Min) High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver Absolute maximum ratings(Ta

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1307 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 350V(Min) ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 350 V 350 V 5 V 6 A 15 A 35 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Juncti