Datasheet4U Logo Datasheet4U.com

2SD1355 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Complement to Type 2SB995 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1355 Silicon NPN Transistor Toshiba
2SD1350 Silicon NPN Transistor Panasonic Semiconductor
2SD1350A Silicon NPN Transistor Panasonic Semiconductor
2SD1351 Silicon NPN Power Transistors Inchange Semiconductor
2SD1351 NPN Complementary Silicon Power Transistors Thinki Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1352 NPN Transistor
2SD1357 NPN Transistor
2SD1358 NPN Transistor
2SD130 NPN Transistor
2SD1300 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1355 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Complement to Type 2SB995 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Recommended for 30W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.