2SD1416 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
2SD1416 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| 2SD1410 | Silicon NPN Darlington Power Transistor |
| 2SD1411 | NPN Transistor |
| 2SD1412 | Silicon NPN Power Transistor |
| 2SD1413 | NPN Transistor |
| 2SD1414 | NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.