2SD1667
2SD1667 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
- Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max.)@ IC= 3A
- plement to Type 2SB1134
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for relay drivers,high-speed inverters,and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
Junction Temperature
2 W
℃
Tstg
Storage Temperature
-55~150 ℃ isc website：.iscsemi....
