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2SD1667 Datasheet Preview

2SD1667 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
2SD1667
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max.)@ IC= 3A
·Complement to Type 2SB1134
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for relay drivers,high-speed inverters,and other
general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
9
A
2
W
25
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD1667 Datasheet Preview

2SD1667 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SD1667
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 10V, f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
Switching Times
ton
Turn-on Time
tstg
Storage Time
IC= 2A, IB1= IB2= 0.2A
tf
Fall Time
MIN TYP. MAX UNIT
50
V
60
V
6
V
0.4
V
100 μA
100 μA
70
280
30
100
pF
30
MHz
0.1
μs
1.4
μs
0.2
μs
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SD1667
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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