Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) - Good Linearity of hFE - Wide Area of Safe Operation - plement to Type 2SB1133 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| D1666 | SavantIC | 2SD1666 |
| 2SD1666 | SavantIC | SILICON POWER TRANSISTOR |
| 2SD1669 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SD1664 | MLS Microelectronics | NPN Transistor |
| 2SD1668 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| D1667 | SANYO | 2SD1667 |
| 2SD1662 | Toshiba | Silicon NPN Transistor |
| 2SD1667 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SD1664-HF | Kexin Semiconductor | NPN Transistors |
| 2SD1664 | SeCoS Halbleitertechnologie GmbH | NPN Silicon General Purpose Transistor |
