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2SD1833 - Silicon NPN Power Transistor

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Description

Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A High Collector Power Dissipation Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency

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Datasheet Details

Part number 2SD1833
Manufacturer INCHANGE
File Size 214.80 KB
Description Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1833 isc website：www.
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