Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.0A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general purpose power amplifier
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD318
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
60
V
60
V
8
V
IC
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
5.0
A
1.
2SD318 Datasheet
