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2SD554 - NPN Transistor

General Description

Contunuous Collector Current-IC= 2A Power Dissipation-PD=30W @TC= 25℃ Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0 V(Max)@ IC = 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD554 DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=30W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0 V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak 5.0 A IB Base Current 1.