2SD556
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) Wide Area of Safe Operation High Power High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD556
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 176.59 KB