Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V (Min)
Wide Area of Safe Operation
High Power
High Current Capability
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high power AF amplifier applications.
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD556
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V (Min) ·Wide Area of Safe Operation ·High Power ·High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
20
A
120
W
175
℃
Tstg
Storage Temperature Range
-65~175 ℃
isc website：www.iscsemi.
2SD556 Datasheet
