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2SD665 - NPN Transistor

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Datasheet Details

Part number 2SD665
Manufacturer INCHANGE
File Size 196.66 KB
Description NPN Transistor
Datasheet download datasheet 2SD665-INCHANGE.pdf

2SD665 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High Current Capability Excellent Safe Operating Area Complement to Type 2SB645 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 200W high-fidelity audio frequency amplifier output stage.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO

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