High Collector Current-IC= 1.5A
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
Good Linearity of hFE
Low Saturation Voltage
Complement to Type 2SB649
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Po
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB649 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
3
A
20 W
1
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD669
isc website：www.iscsemi.
2SD669 Datasheet
