2SD669 Datasheet - INCHANGE

NPN Transistor

2SD669 General Description

*High Collector Current-IC= 1.5A *High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Good Linearity of hFE *Low Saturation Voltage *Complement to Type 2SB649 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Po.

2SD669 Datasheet (205.44 KB)

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2SD669

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INCHANGE

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205.44 KB

Description:

Npn transistor.

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2SD669 NPN Transistor INCHANGE

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2SD669 General Description

Datasheet Details

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