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2SD669 - NPN Transistor

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Description

High Collector Current-IC= 1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SB649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Po

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Datasheet Details

Part number 2SD669
Manufacturer INCHANGE
File Size 205.44 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A 20 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD669 isc website：www.iscsemi.
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