2SD817 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) Low collector saturation voltage Wide area of safe operation With TO-3 Package

and reliable operation.

Designed for high voltage power switching TV hori

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2SD817 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD817
Manufacturer	Inchange Semiconductor
File Size	175.56 KB
Description	NPN Transistor
Datasheet	2SD817 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD817 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low collector saturation voltage ·Wide area of safe operation ·With TO-3 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 50 W 150 ℃ -55-150 ℃ isc website：www.iscsemi.