Datasheet Details
| Part number | 3CD3C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.30 KB |
| Description | PNP Transistor |
| Datasheet | 3CD3C-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | 3CD3C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.30 KB |
| Description | PNP Transistor |
| Datasheet | 3CD3C-INCHANGE.pdf |
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·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -1 A PC Collector Power Dissipation@Tc=75℃ 10 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 12.5 ℃/W 3CD3C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=- 3mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=- 3mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
3CD3001 | TO-251 Plastic Encapsulate Transistors | Jiangsu Changjiang |
| Part Number | Description |
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| 3CD9B | PNP Transistor |
| 3CD9C | PNP Transistor |
| 3CD9D | PNP Transistor |
| 3CD9F | PNP Transistor |