3CD3C Description
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=- 3mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=- 3mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 0.5A;.