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3CD9D Datasheet Preview

3CD9D Datasheet

PNP Transistor

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isc Silicon PNP Power Transistors
INCHANGE Semiconductor
3CD9D
DESCRIPTION
·With TO-3 packaging
·Large collector current
·Low collector saturation voltage
·High power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in DC-DC converter
·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-15
A
PC
Collector Power Dissipation@Tc=75
150
W
TJ
Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.66 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

3CD9D Datasheet Preview

3CD9D Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistors
INCHANGE Semiconductor
3CD9D
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0
VEBO(BR) Emitter-Base Breakdown Voltage
IE=- 10mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= -1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -7.5A; IB= -1.5A
ICEO
Collector Cutoff Current
VCE=- 110V; IB= 0
ICBO
Collector Cutoff Current
VCB=- 110V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -7.5A; VCE=-10V
MIN MAX UNIT
-110
V
-4
V
-2
V
-2
V
-3.0
mA
-1.0
mA
-1.0
mA
10
180
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 3CD9D
Description PNP Transistor
Maker INCHANGE
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3CD9D Datasheet PDF






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