Datasheet Details
| Part number | 3DD9D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.39 KB |
| Description | NPN Transistor |
| Datasheet |
 3DD9D Datasheet
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| Part number | 3DD9D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.39 KB |
| Description | NPN Transistor |
| Datasheet |
3DD9D Datasheet
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·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A PD Total Power Dissipation@TC=75℃ 150 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.66 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD9D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 10mA;
IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA;
IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 10mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD9D.
| Part Number | Description |
|---|---|
| 3DD9A | NPN Transistor |
| 3DD9B | NPN Transistor |
| 3DD9C | NPN Transistor |
| 3DD9E | NPN Transistor |
| 3DD9G | NPN Transistor |
| 3DD9H | NPN Transistor |
| 3DD9I | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |