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BD649F - NPN Transistor

Description

High DC Current Gain Low Saturation Voltage Complement to Type BD650F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

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Datasheet Details

Part number BD649F
Manufacturer INCHANGE
File Size 209.86 KB
Description NPN Transistor
Datasheet download datasheet BD649F Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD649F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD650F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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